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 PD-95736
HFA08TB120PbF
HEXFRED
TM
Ultrafast, Soft Recovery Diode
Features
Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free
BASE CATHODE
VR = 1200V VF (typ.)* = 2.4V IF (AV) = 8.0A Qrr (typ.)= 140nC IRRM (typ.) = 4.5A
3 ANODE 2
4
2
1 CATHODE
trr (typ.) = 28ns di(rec) M /dt (typ.)* = 85A /s
Benefits
Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count
TO-220AC
Description
International Rectifier's HFA08TB120 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 8 amps continuous current, the HFA08TB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08TB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.
Absolute Maximum Ratings Parameter
VR IF @ TC = 100C IFSM IFRM PD @ T C = 25C PD @ TC = 100C TJ TSTG
Cathode-to-Anode Voltage Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range
1200 8.0 130 32 73.5 29 - 55 to 150
Max
Units
V A
W C
* 125C
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10/18/04
1
HFA08TB120PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
VBR Cathode Anode Breakdown Voltage VFM Max. Forward Voltage IRM Max. Reverse Leakage Current CT LS Junction Capacitance Series Inductance 2.6 3.4 2.4 0.31 3.3 4.3 3.1 10 A V IF = 8.0A IF = 16A IF = 8.0A, TJ = 125C VR = VR Rated TJ = 125C, VR = 0.8 x VR RatedD R pF nH VR = 200V
Rated
Min Typ Max Units
1200 V
Test Conditions
IR = 100A
135 1000 11 8.0 20 -
Measured lead to lead 5mm from pkg body
Dynamic Recovery Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M /dt1 Peak Rate of Recovery di(rec)M /dt2 Current During t b Reverse Recovery Charge Peak Recovery Current Reverse Recovery Time
Min Typ Max Units
28 63 106 4.5 6.2 140 335 133 85 95 160 8.0 11 380 880 A/s nC A ns
Test Conditions
IF = 1.0A, dif/dt = 200A/s, V R = 30V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C IF = 8.0A VR = 200V di f /dt = 200A/s
Thermal - Mechanical Characteristics
Parameter
Tlead RthJC RthJA RthCS Wt Lead Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Case to Heat Sink Weight
Min
-
Typ
0.25 6.0 0.21 -
Max
300 1.7 40 12 10
Units
C k/W
g (oz) Kg-cm lbfin
Mounting Torque
6.0 5.0
0.063 in. from Case (1.6mm) for 10 sec Typical Socket Mount Mounting Surface, Flat, Smooth and Greased
2
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HFA08TB120PbF
100
1000 100 10 1 0.1 0.01
0 300 600 900 1200
Reverse Voltage - VR (V) Fig. 2 - Typ. Values Of Reverse Current Vs. Reverse Voltage
T = 150C J 125C 100C
Reverse Current - I R (A)
25C
Instantaneous Forward Current - I F (A)
10
100
Junction Capacitance - CT (pF)
T = 25C J
10
T = 150C J T = 125C J T = 25C J
1 0 2 4 6 8 10
Forward Voltage Drop - VFM (V) Fig. 1 - Max. Forward Voltage Drop Characteristics
1 1 10 100 1000 10000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
10
Thermal Impedance Z thJC (C/W)
1
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01
PDM
0.1
Single Pulse (Thermal Resistance)
Notes:
t1 t2
1. Duty factor D = t1/ t 2 2. Peak Tj = Pdm x ZthJC + Tc
0.01 0.00001
0.0001
0.001 0.01 t1, Rectangular Pulse Duration (Seconds)
0.1
1
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
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3
HFA08TB120PbF
160 140 120
trr ( ns )
20
IF = 8 A IF = 4 A
V R= 160V T J = 125C T J = 25C
16
IF = 8 A IF = 4 A
100 80 60
Irr ( A)
12
8
4 40 20 100
di F /dt (A/s ) Fig. 5 - Typical Reverse Recovery Vs. dif /dt
VR = 160V TJ = 125C TJ = 25C
1000
0 100
di F /dt (A/s )
1000
Fig. 6 - Typical Recovery Current Vs. dif /dt
1200
VR = 160V TJ = 125C TJ = 25C
1000
IF = 8 A IF = 4 A
1000
IF = 8 A IF = 4 A
di (REC) M/dt (A/s )
800
Qrr ( nC )
600
100
400
200
VR = 160V TJ = 125C TJ = 25C
0 100
di F /dt (A/s )
1000
10 100
di F /dt (A/s )
1000
Fig. 8 - Typical Stored Charge vs. dif /dt
Fig. 7 - Typical di (REC) M/dt vs. dif /dt
4
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HFA08TB120PbF
Reverse Recovery Circuit
VR = 200V
0.01 L = 70H D.U.T.
di F /dt dif/dt ADJUST
D G IRFP250 S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
IF 0
t rr ta tb
4
Q rr
2
I RRM
0.5 I RRM di(rec)M/dt 0.75 I RRM
5
1
di F /dt di f /dt
1. diF /dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current
4. Qrr - Area under curve defined by t rr and IRRM t rr x I RRM Q rr = 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr
Fig. 10 - Reverse Recovery Waveform and Definitions
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5
HFA08TB120PbF TO-220AC Package Outline
Dimensions are shown in millimeters (inches)
TO-220AC Part Marking Information
PART NUMBER EXAMPLE: T HIS IS A HFA06T B120 LOT CODE 1789 ASS EMBLED ON WW 19, 2001 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECT IFIER LOGO DAT E CODE ASS EMBLY LOT CODE P = LEAD-FREE YEAR 1 = 2001 WEEK 19 LINE C
PART NUMBER EXAMPLE: T HIS IS A HFA06T B120 LOT CODE 1789 ASS EMBLED ON WW 19, 2001 IN THE ASS EMBLY LINE "C" INT ERNATIONAL RECT IFIER LOGO DAT E CODE AS SEMBLY LOT CODE YEAR 1 = 2001 WEEK 19 P = LEAD-FREE
6
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HFA08TB120PbF
Ordering Information Table
HF
Device Code
A
08
TB 120
HF HF
1
A A
2
08 08
3
TB TB
4
120
120
5
1 2
-
Hexfred Family Process Designator A B = subs. elec. irrad. = subs. Platinum
3 4 5
-
Current Rating Package Outline Voltage Rating
(08 = 8A) (TB = TO-220, 2 Leads) (120 = 1200V)
Note:"PbF" suffix at the end of the part number indicates Lead-Free.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04
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